cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 1/6 BTB1236AJ3 cystek product specification silicon pnp epitaxial planar transistor BTB1236AJ3 description ? high bv ceo ? high current capability ? rohs compliant package symbol outline to-252(dpak) BTB1236AJ3 b base c collector e emitter bv ceo -160v i c -1.5a r cesat(max) 600m b c e absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -180 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -5 v collector current (dc) i c -1.5 a collector current (pulse) i cp -3 (note) a 1 w power dissipation p d 10 w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : single pulse pw Q 350 s, duty Q 2%.
cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 2/6 BTB1236AJ3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 12.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 125 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -180 - - v i c =-50 a, i e =0 bv ceo -160 - - v i c =-1ma, i b =0 bv ebo -5 - - v i e =-50 a, i c =0 i cbo - - -1 a v cb =-160v, i e =0 i ebo - - -1 a v eb =-4v, i c =0 *v ce(sat) - - -0.6 v i c =-1a, i b =-100ma *v be(on) - - -1.5 v v ce =-5v, i c =-150ma h fe 1 180 - 390 - v ce =-5v, i c =-100ma h fe 2 30 - - - v ce =-5v, i c =-500ma f t - 140 - mhz v ce =-5v, i c =-150ma cob - 27 - pf v cb =-10v, i e =0, f=1mhz *pulse test: pulse width 380s, duty cycle 2% ordering information device package shipping BTB1236AJ3-0-t3-g to-252 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 3/6 BTB1236AJ3 cystek product specification typical characteristics current gain vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain--- hfe vce=5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage-(mv) vce(sat)@ic=10ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbe(on)@vce=5v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 2 4 6 8 10 12 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 4/6 BTB1236AJ3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 5/6 BTB1236AJ3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c315j3 issued date : 2010.12.31 revised date : page no. : 6/6 BTB1236AJ3 cystek product specification to-252 dimension marking: style: pin 1.base 2.collector 3.emitter 4.collector 3-lead to-252 plastic surface mount package cystek package code: j3 device name date code b1236a 1 2 3 4 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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